Study of Nitridation Effect on Structural, Morphological, and Optical Properties of GaAs Film Growth on Silicon Substrates via Close Space Vapor Transport Technique

In this work, Gallium Arsenide (GaAs) films growth via Close Space Vapor Transport (CSVT) technique on n-type Silicon (Si) substrates (100) and its nitridation effect in the ammonia (NH3) environment is reported. The GaAs were grown at 800, 900, 1000 ∘C, process was carried out 900 ∘C with an NH3:H2 gasses ratio. without analyzed using X-ray diffraction (XRD), Raman spectroscopy, Diffuse Reflectance Spectroscopy, Scanning Electron Microscopy Energy Dispersive analysis (SEM-EDX). Grazing incidence measurements of nitrided confirm a polycrystalline GaN wurtzite structure preferential orientation along (002), additionality, crystallographic plane (310) low intensity observed 2θ=52.18∘ corresponding to Ga2O3. average quantification results weight (Wt. %) determined by EDS; Ga∼79, N∼17.1, O∼2 As∼1.8 Wt. %. presence GaN, GaxOy, Si, modes found measurements, demonstrating partial nitriding. band gap estimation diffuse reflectance between 3.2 3.38 eV such values are close that reported for bulk (3.4 eV). oxygen could be related or source.